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Modelling of multijunction solar cells with dilute nitride n–i–p–i junctions
Author(s) -
Royall B.,
Balkan N.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201000787
Subject(s) - tandem , optoelectronics , materials science , nitride , band gap , diffusion , conductivity , current (fluid) , solar cell , short circuit , nanotechnology , chemistry , voltage , electrical engineering , layer (electronics) , physics , composite material , engineering , thermodynamics
Abstract We are proposing a novel structure containing GaInNAs n–i–p–i layers with a band gap of 1 eV connected in series to a GaInP/GaAs tandem structure. The device performance is modelled using the drift diffusion conductivity model where the number and thickness of the layers are taken as adjustable parameters to achieve the optimum design. We obtain the value of short‐circuit current to keep the n–i–p–i cell current matched to the other junctions in the tandem structure.