Premium
Influence of high electron concentration on band gap and effective electron mass of InN
Author(s) -
Donmez O.,
Yilmaz M.,
Erol A.,
Ulug B.,
Arikan M. C.,
Ulug A.,
Ajagunna A. O.,
Iliopoulos E.,
Georgakilas A.
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201000780
Subject(s) - effective mass (spring–mass system) , band gap , electron , photoluminescence , materials science , analytical chemistry (journal) , condensed matter physics , chemistry , optoelectronics , physics , chromatography , quantum mechanics
Effects of high electron concentration on the band gap energy of InN films having different layer thicknesses as 600 and 800 nm are investigated experimentally and theoretically. Electron concentrations of the samples are obtained through the Hall measurements accomplished between 77 K and room temperature. Optical characterization of the samples is carried out using the photoluminescence (PL) measurements and the observed PL spectra are explained considering the high electron concentration related effects, i.e. Burstein–Moss shift, band renormalization and band tailing in non‐parabolic k · p model. Extracted PL results indicate that the samples have approximately 0.685 eV band gap energy at 77 K. Effective mass of the carriers, which is calculated as 0.097 m 0 for electron concentration of ∼10 19 cm −3 , are also observed to be influenced by the high carrier concentration.