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Temperature dependence of first‐ and second‐order Raman scattering in silicon nanowires
Author(s) -
Khachadorian S.,
Scheel H.,
Colli A.,
Vierck A.,
Thomsen C.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201000704
Subject(s) - raman spectroscopy , raman scattering , nanowire , silicon , materials science , silicon nanowires , order (exchange) , optics , nanotechnology , physics , optoelectronics , finance , economics
The first‐ and second‐order Raman scattering of the silicon nanowires grown without any metal catalyst is studied in the temperature range from 77 to 873 K. The first‐ and second‐order Raman peaks were found to shift and broaden differently with increasing temperature. We show that this is due to the confinement related enhanced anharmonic effects in silicon nanowires. Our measurements also show that both the second‐ to first‐order Raman peak intensity ratio [ I (2TA) int. / I (1TO) int. and I (2TO) int. / I (1TO) int. ] and the Raman relative intensities [ I (2TA) int. / I (2TO) int. ] increase with increasing temperature.TEM image of SiNWs. The SiNW are 15 nm in diameter and up to a few microns long.