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Bound biexciton luminescence in nitrogen δ ‐doped GaAs
Author(s) -
Harada Yukihiro,
Kojima Osamu,
Kita Takashi,
Wada Osamu
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201000653
Subject(s) - exciton , photoluminescence , biexciton , luminescence , excitation , atomic physics , impurity , doping , line (geometry) , materials science , molecular physics , physics , condensed matter physics , optoelectronics , geometry , quantum mechanics , mathematics
We have studied the detailed fine structure splitting of the photoluminescence lines exhibiting the superlinear excitation power dependence in nitrogen δ ‐doped GaAs. The symmetric splitting energy observed between the 1.493 and 1.509 eV lines suggests that these two lines originate from the same impurity center because the mixing of the bright‐ and dark‐exciton components depends on the electron‐hole exchange energy and the local‐strain field. The excitation power dependence of these two lines indicates that the 1.509 eV line is attributed to the biexciton luminescence corresponding to the 1.493 eV line.