Premium
Time‐resolved ultrafast carrier dynamics in CdTe quantum dots under high pressure
Author(s) -
Liu Bingguo,
He Chunyuan,
Jin Mingxing,
Ding Dajun,
Gao Chunxiao
Publication year - 2011
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201000605
Subject(s) - ultrafast laser spectroscopy , ultrashort pulse , femtosecond , relaxation (psychology) , auger effect , quantum dot , cadmium telluride photovoltaics , electron , materials science , absorption (acoustics) , auger , atomic physics , spectroscopy , chemistry , optoelectronics , laser , physics , optics , psychology , social psychology , quantum mechanics , composite material
Ultrafast carrier relaxation in CdTe quantum dots (QDs) was studied under high pressure by using femtosecond transient absorption spectroscopy. The pressure effects on the carrier relaxation time are obtained for surface trapped electron‐hole recombination and electronic Auger recombination processes. The decrease of the transient absorption signals and the change of sample colour with pressure are assigned to the shift of the energy levels. This shift of the energy levels can lead to an electron transition for materials. And the abrupt changes of the relaxation time at 0.5 and 1.5 GPa are attributed to the electron transition in CdTe QDs under high pressure. Therefore, the high‐pressure ultrafast carrier dynamics research provides a new approach for studying the electron transition in condensed matter.