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Optoelectronic studies of boron nitride nanotubes and hexagonal boron nitride crystals by photoconductivity and photoluminescence spectroscopy experiments
Author(s) -
Brasse Gurvan,
Maine Sylvain,
Pierret Aurélie,
Jaffrennou Périne,
AttalTrétout Brigitte,
Ducastelle Francois,
Loiseau Annick
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201000360
Subject(s) - materials science , photoconductivity , photoluminescence , hexagonal boron nitride , boron nitride , optoelectronics , band gap , photoluminescence excitation , excitation , nitride , boron , nanotechnology , chemistry , physics , graphene , organic chemistry , layer (electronics) , quantum mechanics
The optoelectronic properties of hexagonal boron‐nitride and boron‐nitride nanotubes (BNNTs) are investigated by using photoconductivity experiments, associated to photoluminescence excitation analysis. By this way, excitations related to the conduction band of hexagonal boron‐nitride have been experimentally determined, as well as the free excitonic level. Multiwalled boron‐nitride nanotubes have also been lead by using these methods and the first results suggest some hypotheses about the band gap energy and the nature of the various absorptions, which occur under an UV excitation. These experimental results are presented and discussed and some perspectives are finally suggested.