Premium
Fullerene sensitized silicon for near‐ to mid‐infrared light detection
Author(s) -
Matt G. J.,
Fromherz T.,
Bednorz M.,
Neugebauer H.,
Sariciftci N. S.,
Bauer G.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201000200
Subject(s) - fullerene , heterojunction , materials science , silicon , optoelectronics , derivative (finance) , infrared , spin coating , nanotechnology , coating , chemistry , optics , organic chemistry , physics , financial economics , economics
Abstract Here, we report on a novel light sensing scheme based on a silicon/fullerene‐derivative (methano‐fullerene [6,6] phenyl‐C61 butyric acid methyl ester – PCBM) heterojunction that allows the realization of optoelectronic devices for the detection of near‐ to mid‐IR light. Despite the absent absorption of silicon and the fullerene‐derivative in the IR a heterojunction of these materials absorbes and generates a photocurrentin the spectral range from 1.1 to 0.55 eV. Besides its scientific relevance, the simple fabrication process of the heterojunction (e.g., the fullerene‐derivative is deposited by spin coating on Si) as well as its compatibility with the established complementary metaloxide semiconductor (CMOS) technology makes the presented hybrid approach a promising candidate for widespread applications.