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Encapsulation of electrical contacts for suspended single‐walled carbon nanotubes by atomic layer deposition
Author(s) -
Muoth Matthias,
Lee ShihWei,
Chikkadi Kiran,
Mattmann Moritz,
Helbling Thomas,
Intlekofer Alexander,
Hierold Christofer
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.201000174
Subject(s) - carbon nanotube , atomic layer deposition , nucleation , materials science , nanotechnology , electrical contacts , metal , encapsulation (networking) , chemical engineering , layer (electronics) , optoelectronics , chemistry , metallurgy , computer network , organic chemistry , computer science , engineering
We show encapsulation of electrical contacts to freestanding single‐walled carbon nanotubes (SWNTs) by selective nucleation of Al 2 O 3 from atomic layer deposition (ALD). Passivating electrical contacts is often required to prevent degradation of devices, and for chemical sensing it can separate sensing mechanisms either dedicated to metal contact regions or to SWNT channels. As ALD Al 2 O 3 does not grow on defect‐free SWNTs, Al 2 O 3 is selectively deposited on contacts to suspended SWNTs. TEM imaging on micromachined structures enables to investigate the mask‐less fabricated encapsulation.Surface selective nucleation of Al 2 O 3 during ALD encapsulates electrical contacts to suspended SWNTs while leaving pristine sections unaffected.