Premium
Determination of the complex linear electro‐optic coefficient of GaAs and InP
Author(s) -
Pristovsek Markus
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983950
Subject(s) - anisotropy , doping , band gap , materials science , condensed matter physics , spectral line , optics , reflectivity , spectroscopy , analytical chemistry (journal) , chemistry , optoelectronics , physics , quantum mechanics , chromatography
The complex linear electro‐optic coefficient d 41 was determined for the first time above the fundamental band gap of GaAs and InP by measuring the doping induced band bending of several oxidized samples in reflectance anisotropy spectroscopy. From the real and imaginary part of the change of the spectra for different carrier concentrations the spectral change of d 41 was calculated. This is the first determination of the imaginary part ${\rm Im}\,(d_{41} )$ .