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Single Al x Ga 1− x As nanowires probed by Raman spectroscopy
Author(s) -
Buick Benjamin,
Speiser Eugen,
Prete Paola,
Paiano Pasquale,
Lovergine Nicola,
Richter Wolfgang
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983948
Subject(s) - nanowire , raman spectroscopy , materials science , metalorganic vapour phase epitaxy , analytical chemistry (journal) , spectroscopy , ternary operation , epitaxy , optoelectronics , nanotechnology , optics , chemistry , physics , layer (electronics) , quantum mechanics , computer science , programming language , chromatography
The stoichiometry of single ternary III–V semiconductor nanowires was analyzed by Raman spectroscopy. Free‐standing Al x Ga 1− x As nanowires were obtained through metal organic vapor phase epitaxy (MOVPE) by the vapor liquid solid (VLS) mechanism on GaAs substrates. The as‐grown nanowires were studied with a scanning confocal Raman spectrometer (spatial resolution ≈300 nm). They were located by Rayleigh imaging and individual nanowires selected for Raman spectroscopy. The acquired spectra exhibit 2‐mode behavior. The stoichiometry of single nanowires was determined based on the frequencies of the GaAs‐ and AlAs‐like transversal optical (TO) and longitudinal optical (LO) peaks with an accuracy of below 10%. Measurements at different positions along the axis revealed variations of the composition within single nanowires. This non‐uniformity evidences that the nanowires possess an internal structure.