Premium
Segregation, quantum confinement effect and band offset for [110] SiGe NWs
Author(s) -
Amato Michele,
Palummo Maurizia,
Ossicini Stefano
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983931
Subject(s) - nanowire , band offset , condensed matter physics , quantum dot , offset (computer science) , materials science , lattice (music) , potential well , optoelectronics , nanotechnology , band gap , physics , valence band , computer science , programming language , acoustics
Results of first‐principles DFT simulations provide strong evidence that, at zero temperature, for [110] oriented SiGe nanowires (NWs), the segregated structure is favoured with respect to the mixed ones; for this observation two different schemes of calculations are presented and discussed. Moreover the segregation strongly influences the NWs electronic properties, inducing a reduced quantum confined effect (RQCE). We show here that it depends on the effect of strain in the plane normal to the direction of growth and not on the choice of lattice parameter in the direction of growth. A qualitative evaluation of the band offset between Si and Ge for SiGe NWs is also presented.