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Compact modeling of optically gated carbon nanotube field effect transistor
Author(s) -
Liao SiYu,
Maneux Cristell,
Pouget Vincent,
Frégonèse Sébastien,
Zimmer Thomas
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983818
Subject(s) - carbon nanotube field effect transistor , carbon nanotube , transistor , materials science , field effect transistor , optoelectronics , nanotechnology , voltage , electrical engineering , engineering
Nanoelectronic circuit design flow is based on device description through the compact models available in the designer device library. We have developed a compact model for the optically gated carbon nanotube field effect transistor (OG‐CNTFET) by investigating the trapping and detrapping of electron effects in the device. This compact model represents an important enhancement of conventional CNTFET models already released. Especially, it includes the optical writing, the electrical reset, and the non‐volatile memory effect of the device operations. We also demonstrate that the simulation results obtained using this compact model, are in close agreement with preliminary experimental measurements.