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Acceptor behavior of N 2 O in MOCVD‐grown ZnO thin‐film transistors
Author(s) -
Seo Ogweon,
Kim Haemi,
Yun Junho,
Jo Jungyol
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983683
Subject(s) - metalorganic vapour phase epitaxy , materials science , chemical vapor deposition , doping , analytical chemistry (journal) , annealing (glass) , capacitance , secondary ion mass spectroscopy , nitrogen , acceptor , secondary ion mass spectrometry , gate dielectric , metal , transistor , optoelectronics , ion , chemistry , nanotechnology , silicon , electrode , layer (electronics) , voltage , epitaxy , electrical engineering , condensed matter physics , engineering , composite material , chromatography , metallurgy , physics , organic chemistry
Abstract We studied the effect of N 2 O doping in ZnO grown by metal organic chemical vapor deposition (MOCVD). The presence of nitrogen in ZnO was confirmed by secondary ion mass spectroscopy (SIMS). Capacitance data showed that there is significant carrier depletion at the ZnO/dielectric interface, and that the depletion was sensitive to vacuum annealing. Capacitance measured in N 2 O doped ZnO increased at negative gate voltages, which indicates positive charge increase in ZnO. In comparison, ZnO grown without N 2 O showed capacitance decrease at the same condition. Our results suggest that the positive charge increase is coming from hole traps introduced by nitrogen doping.