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Raman scattering characterization of p‐type AlGaN layers
Author(s) -
Kim Jung Gon,
Yamamoto Hiroaki,
Kamei Yasuhito,
Hasuike Noriyuki,
Harima Hiroshi,
Kisoda Kenji,
Ishida Masaya,
Furukawa Katsuki,
Taneya Mototaka
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983568
Subject(s) - raman spectroscopy , monolayer , raman scattering , dopant , impurity , materials science , annealing (glass) , doping , phonon , analytical chemistry (journal) , diffraction , chemistry , optoelectronics , optics , nanotechnology , condensed matter physics , physics , organic chemistry , chromatography , composite material
Mg‐doped Al x Ga 1− x N layers were characterized by microscopic Raman scattering to study the activation process of dopant by thermal annealing and behavior of H impurities. Two types of samples, a monolayer and a device‐like (laser diode) structure, were prepared for this study. Local vibrational modes (LVMs) related to H and Mg were clearly observed in the monolayer sample. The LVMs evidenced activation of Mg in Ga site with the release of H. Electronic Raman signal due to free hole was also observed in the annealed sample. In the device‐like structure sample, the Mg‐doped Al x Ga 1− x N clading layer showed similar results, though the signal was weaker than the monolayer sample. Interactions with neighboring layers may have influenced the layer properties. Composition of Al in the Al x Ga 1− x N layer was also determined from phonon frequencies in both samples, and the result well agreed with that of X‐ray diffraction analysis.