Premium
Dislocation reduction in GaN grown on Si(111) using a strain‐driven 3D GaN interlayer
Author(s) -
Häberlen Maik,
Zhu Dandan,
McAleese Clifford,
Zhu Tongtong,
Kappers Menno J.,
Humphreys Colin J.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983537
Subject(s) - dislocation , materials science , metalorganic vapour phase epitaxy , nucleation , layer (electronics) , epitaxy , microstructure , optoelectronics , composite material , chemistry , organic chemistry
In this paper we demonstrate a strain‐driven GaN interlayer method to reduce dislocation densities in GaN grown on (111) oriented silicon by metal organic vapour phase epitaxy (MOVPE). In order to achieve crack‐free GaN layers of reasonable thicknesses and dislocation densities it is crucial to integrate both dislocation reduction and strain management layers. In contrast to techniques like FACELO or nanoELO we show the in situ formation of GaN islands directly on the AlN nucleation layer without the need to deposit a SiO 2 or SiN x mask. A graded AlGaN layer for strain management can be grown on top of this dislocation reducing 3D GaN inter‐layer in order to achieve crack‐free GaN layers grown on top of the AlGaN strain management layer. Furthermore, an additional SiN x layer for subsequent dislocation reduction can also be incorporated into the structure and is shown to efficiently reduce the dislocation density down to the low 10 9 cm −2 . The structural properties of the 3D GaN island buffer layer and overgrown samples are studied by means of SEM, cross‐sectional, and plan view TEM. Cathodoluminiscence in an SEM is employed to correlate the dislocation microstructure as observed by plan view TEM with luminescent properties.