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Microarea strain analysis in GaN‐based laser diodes using high‐resolution microbeam X‐ray diffraction
Author(s) -
Yokogawa Toshiya,
Kato Ryo,
Kimura Shigeru,
Sakata Osami
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983500
Subject(s) - microbeam , materials science , diffraction , optics , collimated light , diode , laser , optoelectronics , x ray crystallography , ridge , physics , geology , paleontology
Microarea strain distribution in real ridge waveguide laser diodes composed of InGaN/AlGaN/GaN lattice‐mismatched heterostructure have been studied by high‐resolution microbeam X‐ray diffraction using highly collimated sub‐µm beam. By the microarea mapping of X‐ray diffraction, we confirmed the distribution change of lattice strain around ridge stripe region due to the change of biaxial tensile strain of p‐type AlGaN layer. We found that the strain distribution in the ridge waveguide laser diode is not uniform around the ridge stripe region.Microarea mapping of X‐ray rocking curves using asymmetric (10−14) reflection.