Sub‐ns electrical control of spin polarization in a semiconductor by microscale current loops | Zendy

Chen Y. S. | Zendy; Wiater M. | Zendy; Karczewski G. | Zendy; Wojtowicz T. | Zendy; Bacher G. | Zendy

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Sub‐ns electrical control of spin polarization in a semiconductor by microscale current loops

Author(s) -

Chen Y. S.,

Wiater M.,

Karczewski G.,

Wojtowicz T.,

Bacher G.

Publication year - 2010

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200983279

Subject(s) - spins , microscale chemistry , semiconductor , polarization (electrochemistry) , magnetic field , condensed matter physics , quantum well , spin (aerodynamics) , magnetic semiconductor , materials science , spin polarization , optoelectronics , physics , optics , chemistry , electron , quantum mechanics , laser , mathematics education , mathematics , thermodynamics

We demonstrate a method to electrically control the spin polarization in a diluted magnetic semiconductor (DMS) quantum well (QW) on a micrometer length scale. A variable magnetic field generated from a microscale current loop atop a single CdMnTe/CdMgTe QW magnetizes the Mn 2+ ion spins in the DMS QW and, via the sp – d exchange interaction, polarizes the spins of photon‐generated carriers. In the absence of an external field, the spin polarization can be switched on a time scale clearly below 1 ns.

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