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Sub‐ns electrical control of spin polarization in a semiconductor by microscale current loops
Author(s) -
Chen Y. S.,
Wiater M.,
Karczewski G.,
Wojtowicz T.,
Bacher G.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983279
Subject(s) - spins , microscale chemistry , semiconductor , polarization (electrochemistry) , magnetic field , condensed matter physics , quantum well , spin (aerodynamics) , magnetic semiconductor , materials science , spin polarization , optoelectronics , physics , optics , chemistry , electron , quantum mechanics , laser , mathematics education , mathematics , thermodynamics
We demonstrate a method to electrically control the spin polarization in a diluted magnetic semiconductor (DMS) quantum well (QW) on a micrometer length scale. A variable magnetic field generated from a microscale current loop atop a single CdMnTe/CdMgTe QW magnetizes the Mn 2+ ion spins in the DMS QW and, via the sp – d exchange interaction, polarizes the spins of photon‐generated carriers. In the absence of an external field, the spin polarization can be switched on a time scale clearly below 1 ns.