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Violet–green laser converter based on MBE grown II–VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode
Author(s) -
Lutsenko Evgenii V.,
Sorokin Sergey V.,
Sedova Irina V.,
Vainilovich Aliaksei G.,
Tarasuk Nikolai P.,
Pavlovskii Viacheslav N.,
Yablonskii Gennadii P.,
Gronin Sergey V.,
Kop'ev Pyotr S.,
Ivanov Sergey V.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983275
Subject(s) - quantum dot , laser , optoelectronics , materials science , molecular beam epitaxy , superlattice , heterojunction , quantum dot laser , quantum well , diode , laser diode , quantum tunnelling , semiconductor laser theory , optics , epitaxy , nanotechnology , physics , layer (electronics)
The violet–green laser converter based on a molecular‐beam‐epitaxy (MBE) grown CdSe quantum dot (QD) laser heterostructure pumped by a commercial InGaN laser diode (LD) emission has been fabricated and studied in detail. The optimized II–VI laser heterostructure consists of asymmetrical ZnSe/ZnSSe superlattice (SL) waveguide and active region comprising five CdSe QD sheets (QDS) placed in the centre of 2‐nm‐thick ZnSe quantum wells. The new laser structure design provides both a high homogeneity of optical pumping of the CdSe QDS due to tunnelling of charge carriers between the QDS separated by 5‐nm‐thick ZnSe/ZnSSe/ZnSe barriers and high optical confinement factor. Optimization of both cavity length of the II–VI laser and parameters of optical focusing system to obtain a narrow stripe with the length slightly exceeding the cavity length has been performed. As a result, the maximum achieved quantum efficiency and pulse output power in green have been as high as 8% and 65 mW, respectively.