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The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures
Author(s) -
Thonke K.,
Schirra M.,
Schneider R.,
Reiser A.,
Prinz G. M.,
Feneberg M.,
Sauer R.,
Biskupek J.,
Kaiser U.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983273
Subject(s) - cathodoluminescence , stacking , acceptor , materials science , doping , nanostructure , spectral line , molecular physics , crystallography , optoelectronics , condensed matter physics , nanotechnology , chemistry , physics , nuclear magnetic resonance , luminescence , astronomy
Cathodoluminescence spectra recorded with high spatial and wavelength resolution on tilted ZnO epitaxial layers allow to identify a very prominent emission peak at 3.314 eV as a free electron to shallow acceptor ( E A ≈ 130 meV) transition. By correlation with TEM cross‐section images recorded on the same samples we can find these acceptor states to be located on basal plane stacking faults (BSFs). Locally, high concentrations of acceptor states are found. Since this spectral feature is often reported in literature especially after attempts to obtain p‐type or transition metal doping, we conclude that stacking faults are a common by‐product when group V or other extrinsic atoms are incorporated in ZnO layers or nanostructures.