Premium
Growth characteristics of single‐crystalline ZnMgO layers by ultrasonic spray assisted mist CVD technique
Author(s) -
Nishinaka Hiroyuki,
Kamada Yudai,
Kameyama Naoki,
Fujita Shizuo
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983247
Subject(s) - wurtzite crystal structure , materials science , sapphire , thin film , band gap , luminescence , chemical vapor deposition , analytical chemistry (journal) , optoelectronics , chemical engineering , nanotechnology , metallurgy , optics , zinc , chemistry , laser , physics , engineering , chromatography
A simple, safe, and cost‐effective ultrasonic spray assisted mist chemical vapor deposition (CVD) method has been applied for the growth of Zn 1− x Mg x O alloy thin films on a‐plane sapphire substrates with ZnO buffer layers. Single‐crystalline (0001)‐oriented wurtzite Zn 1− x Mg x O thin films have been prepared for x of between x = 0 and 0.25. The optical bandgap can be tuned from 3.28 to 3.96 eV with a pure wurtzite phase ( x = 0–0.25). At x = 0.31 slight segregation of rocksalt ZnMgO was seen in wurtzite ZnMgO, but the bandgap was as large as 4.10 eV. Zn 1− x Mg x O alloys exhibited room temperature ultraviolet cathode luminescence (CL) at energies between 3.28 ( x = 0) and 4.04 eV ( x = 0.31) without no observable deep level emissions. This novel growth technique can contribute to evolution of various oxide thin films of unique functions.