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Schottky barrier contacts formed on polar and nonpolar Mg x Zn 1− x O films grown by remote plasma enhanced MOCVD
Author(s) -
Nakamura A.,
Hayashi T.,
Hierro A.,
Tabares G.,
Ulloa J. M.,
Muñoz E.,
Temmyo J.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983227
Subject(s) - metalorganic vapour phase epitaxy , sapphire , materials science , substrate (aquarium) , schottky diode , schottky barrier , polar , analytical chemistry (journal) , diode , optoelectronics , epitaxy , chemistry , optics , nanotechnology , laser , layer (electronics) , chromatography , oceanography , physics , astronomy , geology
The growth of Mg x Zn 1− x O films of both polar and nonpolar orientation in was successfully carried out by remote‐plasma‐enhanced MOCVD (RPE‐MOCVD) technique. The polar face of as‐grown film had a vertically aligned columnar growth with respect to the sapphire (11–20) substrate. These columns had an average diameter of about 40 nm. In contrast, the nonpolar face of as‐grown film had a sword‐shape lying with an average width of 250 nm on the sapphire (10–12) substrate. Au/Schottky diodes (SDs) were fabricated on both polar face of c ‐plane (0001) Mg x Zn 1− x O and nonpolar face of a ‐plane (11–20) Mg x Zn 1− x O. A rectifying behavior had been achieved and a series resistance was increased with Mg contents in both polar and nonpolar diodes. A residual electron concentration was decreased with the Mg content from 3 × 10 17 cm −3 at x = 0 to 1.2 × 10 16 cm −3 at x = 0.18 in the case of nonpolar films.