Schottky barrier contacts formed on polar and nonpolar Mg x Zn 1− x O films grown by remote plasma enhanced MOCVD

The growth of Mg x Zn 1− x O films of both polar and nonpolar orientation in was successfully carried out by remote‐plasma‐enhanced MOCVD (RPE‐MOCVD) technique. The polar face of as‐grown film had a vertically aligned columnar growth with respect to the sapphire (11–20) substrate. These columns had an average diameter of about 40 nm. In contrast, the nonpolar face of as‐grown film had a sword‐shape lying with an average width of 250 nm on the sapphire (10–12) substrate. Au/Schottky diodes (SDs) were fabricated on both polar face of c ‐plane (0001) Mg x Zn 1− x O and nonpolar face of a ‐plane (11–20) Mg x Zn 1− x O. A rectifying behavior had been achieved and a series resistance was increased with Mg contents in both polar and nonpolar diodes. A residual electron concentration was decreased with the Mg content from 3 × 10 17  cm −3 at x  = 0 to 1.2 × 10 16  cm −3 at x  = 0.18 in the case of nonpolar films.