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Pre‐requisites for the formation of unusual diffusion profiles in II–VI semiconductors
Author(s) -
Wolf H.,
Kronenberg J.,
Wagner F.,
Wichert Th.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983222
Subject(s) - impurity , diffusion , cadmium telluride photovoltaics , semiconductor , metal , materials science , layer (electronics) , range (aeronautics) , analytical chemistry (journal) , chemical physics , chemistry , condensed matter physics , thermodynamics , nanotechnology , metallurgy , optoelectronics , composite material , physics , chromatography , organic chemistry
The diffusion of the impurities Cu, Ag, Au, and Na in CdTe and CdZnTe exhibits the unusual phenomenon of uphill diffusion if the diffusion of the impurity is performed under external Cd pressure at temperatures typically in the range 700–900 K. A model is proposed that describes these concentration profiles quantitatively and yields pre‐requisites for the observation of uphill diffusion. If a metal layer is evaporated onto the implanted surface, the diffusion of the impurity is strongly affected by the generation of intrinsic defects at the metal–semiconductor interface.