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Structural instability of N‐acceptors in homo‐ and heteroepitaxially grown ZnO by MBE
Author(s) -
Ando K.,
Abe T.,
Taya T.,
Ishihara Y.,
Enomoto K.,
Yamazaki Y.,
Yoshikawa J.,
Fujino K.,
Nakamura H.,
Ohno T.,
Kasada H.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983208
Subject(s) - molecular beam epitaxy , acceptor , materials science , instability , hall effect , epitaxy , thermal conduction , doping , optoelectronics , crystallography , electrical resistivity and conductivity , chemistry , condensed matter physics , nanotechnology , physics , layer (electronics) , quantum mechanics , mechanics , composite material
Unique properties of the N‐acceptor in homo‐ and heteroepitaxially grown ZnO by molecular beam epitaxy (MBE) are studied by means of microproving of surface sheet‐resistance, Hall‐effect measurement, persistent photoconduction (PPC) and thermally stimulated current (TSC). Rapid postanneal of N‐doped ZnO is found to induce the change in the conduction type from n‐type (as‐grown) to p/n‐type mixed conduction, forming island structure, and these properties are related to a structural instability of the N‐acceptor.