Determination of the band‐gap of MgS and MgS‐rich Zn 1− x  Mg  x  S  y  Se 1− y   alloys from optical transmission measurements | Zendy

Davidson Ian A. | Zendy; Moug Richard T. | Zendy; Izdebski Frauke | Zendy; Bradford Christine | Zendy; Prior Kevin A. | Zendy

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Determination of the band‐gap of MgS and MgS‐rich Zn 1− x Mg x S y Se 1− y alloys from optical transmission measurements

Author(s) -

Davidson Ian A.,

Moug Richard T.,

Izdebski Frauke,

Bradford Christine,

Prior Kevin A.

Publication year - 2010

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200983190

Subject(s) - band gap , alloy , materials science , analytical chemistry (journal) , epitaxy , crystallography , metallurgy , optoelectronics , layer (electronics) , nanotechnology , chemistry , chromatography

As part of our development of an epitaxial lift‐off process, utilising a sacrificial magnesium sulphide (MgS) layer, we have developed a MgS‐rich ZnMgSSe alloy which provides excellent carrier confinement and resists both oxidation and acid attack. Here the optical transmission of the alloy has been measured and its bandgap determined as a direct transition at 4.19 ± 0.04 eV. Its composition has also been determined by X‐ray interference (XRI) and comparison with simulations. For a range of alloy samples we obtain compositions of the Zn 1− x Mg x S y Se 1− y layers which are ( x , y ) = (0.80 ± 0.02, 0.645 ± 0.025). Using the alloy bandgap and composition we have determined direct bandgap transition energy for MgS by extrapolation. This is found to be 4.78 ± 0.14 eV.

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