Premium
Determination of the band‐gap of MgS and MgS‐rich Zn 1− x Mg x S y Se 1− y alloys from optical transmission measurements
Author(s) -
Davidson Ian A.,
Moug Richard T.,
Izdebski Frauke,
Bradford Christine,
Prior Kevin A.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983190
Subject(s) - band gap , alloy , materials science , analytical chemistry (journal) , epitaxy , crystallography , metallurgy , optoelectronics , layer (electronics) , nanotechnology , chemistry , chromatography
Abstract As part of our development of an epitaxial lift‐off process, utilising a sacrificial magnesium sulphide (MgS) layer, we have developed a MgS‐rich ZnMgSSe alloy which provides excellent carrier confinement and resists both oxidation and acid attack. Here the optical transmission of the alloy has been measured and its bandgap determined as a direct transition at 4.19 ± 0.04 eV. Its composition has also been determined by X‐ray interference (XRI) and comparison with simulations. For a range of alloy samples we obtain compositions of the Zn 1− x Mg x S y Se 1− y layers which are ( x , y ) = (0.80 ± 0.02, 0.645 ± 0.025). Using the alloy bandgap and composition we have determined direct bandgap transition energy for MgS by extrapolation. This is found to be 4.78 ± 0.14 eV.