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Electron beam pumped lasers based on II–VI compound nanostructures from the visible to UVA
Author(s) -
Tiberi Michael D.,
Kozlovsky Vladimir I.,
Kuznetsov Peter I.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983174
Subject(s) - optoelectronics , lasing threshold , materials science , laser , ultraviolet , quantum well , substrate (aquarium) , optics , blue laser , band gap , cathode ray , wavelength , electron , physics , oceanography , quantum mechanics , geology
The latest results on electron beam pumped vertical‐cavity surface‐emitting lasers (eVCSEL) based on wide band gap II–VI compounds emitting in blue and ultraviolet (UV) (360–390 nm) ranges are presented. A typical structure consists of 20–30 quantum wells (QWs) of 5–8 nm in thickness separated by ZnMgSSe barrier layers closely lattice matched to the substrate. The structure period is tuned to the lasing wavelength achieving resonant‐periodic gain. For blue, structures were grown on GaAs substrate while for UV on GaP. ZnSe layers with the addition of Cd were used for blue. In contrast, ZnSSe QWs were best suited for UV. All structures were grown by MOVPE at a temperature range of 430–470 °C. Up to 10 W in output power in blue and 2.8 W in the UV range at room temperature (RT) in scanning mode was achieved.