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Discussion on the 300 mK anomaly in YbRh 2 Si 2
Author(s) -
Custers J.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983052
Subject(s) - anomaly (physics) , electrical resistivity and conductivity , impurity , condensed matter physics , physics , quantum mechanics
The specific heat coefficient of YbRh 2 Si 2 shows a sudden strong increase, the so‐called “upturn” at $T \approx 300\;{\rm mK}$ which also manifest itself in ac susceptibility and electrical resistivity. In mono‐isotopic 174 YbRh 2 Si 2 this upturn is absent. At first glance, this points to a nuclear contribution as origin of the anomaly. However, based on resistivity results also impurities might be held responsible for the exotic anomaly at 300 mK.