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Superconductor–insulator transition in two dimensions for neutral disorder
Author(s) -
Gold A.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200983017
Subject(s) - coulomb , condensed matter physics , phase diagram , boson , transition point , superconductivity , physics , gaussian , quantum phase transition , insulator (electricity) , phase transition , quantum critical point , statistical physics , quantum , critical point (mathematics) , quantum mechanics , phase (matter) , thermodynamics , mathematics , electron , mathematical analysis , optoelectronics
We describe the superconductor–insulator transition in thin films via the model of a disorder Bose‐condensate (dirty boson model). Coulomb interaction due to charged carriers and a random potential described by a strength and a range (Gaussian disorder) are taken into account. Analytical and numerical results are presented for the transition point of the quantum‐phase transition in terms a microscopic model for the disorder. We compare with experimental results. Some comments are made concerning a two‐fluid model. The corresponding phase‐transition diagram is discussed.