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Growth of few‐layer graphene by gas‐source molecular beam epitaxy using cracked ethanol
Author(s) -
Maeda Fumihiko,
Hibino Hiroki
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200982974
Subject(s) - graphene , raman spectroscopy , molecular beam epitaxy , wafer , materials science , epitaxy , substrate (aquarium) , x ray photoelectron spectroscopy , layer (electronics) , transmission electron microscopy , optoelectronics , raman scattering , nanotechnology , chemical engineering , optics , physics , oceanography , engineering , geology
To obtain few‐layer graphene (FLG), we propose a new growth process based on gas‐source molecular beam epitaxy, in which a cracked‐ethanol source is employed. To show the feasibility of this growth process, we tried to homoepitaxially grow FLG on epitaxial graphene formed on a SiC substrate. The results of Raman scattering, transmission electron microscopy, and in situ X‐ray photoelectron spectroscopy analyses prove that graphene was formed on the substrate, indicating that our approach is feasible for the formation of wafer‐scale FLG.