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Investigation of graphene–SiC interface by nanoscale electrical characterization
Author(s) -
Sonde Sushant,
Giannazzo Filippo,
Raineri Vito,
Rimini Emanuele
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200982969
Subject(s) - graphene , materials science , characterization (materials science) , nanoscopic scale , exfoliation joint , schottky barrier , nanotechnology , current (fluid) , graphene nanoribbons , graphene oxide paper , optoelectronics , electrical engineering , engineering , diode
We have carried out an investigation of graphene/4H‐SiC (0001) interface by nanoscale current transport measurements. Graphene was deposited by mechanical exfoliation of HOPG. Novel Scanning Probe Current Mapping and Scanning Probe Current Spectroscopy are found to be useful for non‐destructive characterization of graphene. Presence of graphene lowers Schottky barrier height on 4H‐SiC (0001). Observed barrier heights (0.8 ± 0.1 eV) are comparable but higher than reported in literature for 6H‐SiC (0001). Current mapping of graphene deposited on 4H‐SIC(0001). Highly conductive regions in the current maps correspond to graphene in the morphological maps.