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Ambient and temperature dependent electric properties of backgate graphene transistors
Author(s) -
Hummel Christian,
Schwierz Frank,
Hanisch Antonia,
Pezoldt Jörg
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200982958
Subject(s) - graphene , materials science , transistor , electrical engineering , voltage , nanotechnology , engineering
The electrical behavior of backgate graphene field effect (GFET) transistor was studied at different ambient conditions. Backgate p‐channel GFET transistors were fabricated on oxidized silicon wafers by exfoliation of graphite. The carrier mobilities were determined from the measured transconductance. For all ambients investigated (N 2 , Ar, and air), the graphene transistors show enhanced mobilities at elevated temperatures. This behavior can be explained by a stronger screening of scattering centers, i.e., defects in graphene and at the graphene oxide interface, with increasing temperature. For operation in air the transistors showed a higher transconductance compared to the operation in nitrogen and argon due to the strong acceptor‐like behavior of gases adsorbed on the graphene surface.Effect of temperature and ambient on the output characteristic of a backgate GFET.