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Fabrication of graphene nanoribbons via nanowire lithography
Author(s) -
Fasoli A.,
Colli A.,
Lombardo A.,
Ferrari A. C.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200982356
Subject(s) - nanowire , nanoelectronics , graphene , materials science , nanotechnology , graphene nanoribbons , etching (microfabrication) , fabrication , lithography , reactive ion etching , substrate (aquarium) , semiconductor , silicon , nanosphere lithography , optoelectronics , layer (electronics) , medicine , oceanography , alternative medicine , pathology , geology
Graphene nanoribbons (GNRs) are the counterpart of nanotubes in graphene nanoelectronics. The search for a cheap, parallel, and deterministic technique for practical implementation of these structures is still open. Nanowire lithography (NWL) consists in using nanowires (NWs) as etch masks to transfer their one‐dimensional morphology to an underlying substrate. Here, we show that oxidized silicon NWs (SiNWs) are a simple and compatible system to implement NWL on graphene. The SiNWs morphology is transferred onto a graphene flake by a low‐power O 2 plasma in a deep‐reactive‐ion‐etcher. The process leads to conformal GNRs with diameter comparable to the overlaying NW lateral dimensions. The diameter can be further reduced by multiple O 2 etching steps. Field‐effect measurements show the transition to a semiconductor for low diameters.