Premium
Sensing mechanism of metal‐decorated single‐walled carbon nanotube field effect transistor sensors
Author(s) -
Loh YoungSeob,
Lee KeumJu,
So HyeMi,
Chang Hyunju,
Kim JuJin,
Lee JeongO
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200982346
Subject(s) - carbon nanotube , materials science , field effect transistor , nanotechnology , transistor , mechanism (biology) , metal , nanoparticle , quantum dot , optoelectronics , physics , quantum mechanics , voltage , metallurgy
We investigate the sensing mechanism underlying metal‐decorated single‐walled carbon nanotube field effect transistor (SWNT‐FET) sensors. Upon lowering the temperature, two types of periodic oscillations appeared in the I–V g characteristics of Ni‐decorated SWNT‐FETs, specifically, oscillations with a smaller period superimposed (beating) on larger oscillations. These oscillations may have originated from charging of the Ni nanoparticles. This behavior is consistent with a system of multiple quantum dots that are resistively coupled via the SWNT, in which charges generated through biomolecular interactions can be transferred from the metal nanoparticles to the SWNTs without delay.AFM image of a Ni‐decorated SWNT‐FET.