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Influence of surface roughness scattering on electron low‐field mobility in thin undoped GaAs‐in‐Al 2 O 3 nanowires with rectangular cross‐section [Phys. Status Solidi B 247 , No. 1, 134–139 (2010)]
Author(s) -
Pozdnyakov Dmitry
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200945616
Subject(s) - nanowire , scattering , section (typography) , surface finish , surface roughness , electron , field (mathematics) , condensed matter physics , electron scattering , cross section (physics) , surface (topology) , physics , materials science , chemistry , mathematics , optics , nanotechnology , quantum mechanics , geometry , composite material , pure mathematics , computer science , operating system