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Spectra and energy levels of Eu 3+ in cubic phase Gd 2 O 3
Author(s) -
Smith Eric R.,
Gruber John B.,
Wellenius Patrick,
Muth John F.,
Everitt Henry O.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200945602
Subject(s) - sesquioxide , europium , crystallite , materials science , transmission electron microscopy , crystal (programming language) , analytical chemistry (journal) , cubic crystal system , crystal structure , chemistry , crystallography , luminescence , nanotechnology , optoelectronics , metallurgy , chromatography , computer science , programming language
In pulsed laser deposition of the sesquioxide semiconductor Gd 2 O 3 , adjusting the chamber oxygen pressure controls the crystalline structure of the host. This technique was used to deposit thin films of nominally 1.6% by weight europium‐doped, cubic phase Gd 2 O 3 using 50 mTorr of oxygen. Structural measurements using high‐resolution transmission electron microscopy and selected area electron diffraction confirm the films were polycrystalline, cubic phase Eu:Gd 2 O 3 . The spectroscopic assignment of emission lines to specific radiative transitions within the trivalent Eu ion is confirmed by theoretical analysis of the appropriate crystal field Hamiltonian. Detailed crystal‐field splittings are presented for the 5 D J=0‐2 and 7 F J=0‐5 multiplet manifolds of Eu 3+ in this host material.