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Numerical simulations of bulk crystal growth on different scales: silicon and GeSi
Author(s) -
Miller Wolfram
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200945541
Subject(s) - ingot , silicon , materials science , casting , crystal growth , coupling (piping) , crystal (programming language) , monocrystalline silicon , czochralski method , engineering physics , crystallography , metallurgy , computer science , physics , chemistry , alloy , programming language
Numerical modelling has become an important tool for improving or introducing new processes in bulk crystal growth. For a complete description, scales ranging from atomistic ones up to those of industrial furnaces have to be considered. This article presents methods used on different scales for the Czochralski growth of silicon as well as of Ge 1– x Si x alloys and for ingot casting of silicon. It shows the recent developments for the different scales and the attempts at coupling the approaches.