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Structure and luminescence of rare earth‐doped silicon oxides studied through their X‐ray absorption near edge structure and X‐ray excited optical luminescence
Author(s) -
Roschuk T.,
Wilson P. R. J.,
Li J.,
Zalloum O. H. Y.,
Wojcik J.,
Mascher P.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200945531
Subject(s) - luminescence , materials science , xanes , photoluminescence , doping , silicon , excited state , silicon oxide , absorption (acoustics) , absorption edge , optoelectronics , oxide , thin film , analytical chemistry (journal) , nanotechnology , chemistry , spectroscopy , band gap , atomic physics , metallurgy , composite material , silicon nitride , physics , quantum mechanics , chromatography
The X‐ray absorption near edge structure (XANES) and X‐ray excited optical luminescence (XEOL) of a set of photoluminescent rare earth (RE) (Tb, Ce) doped silicon oxide (SiO x ) thin films, having compositions ranging from O‐rich (32% Si) to Si‐rich (36% Si), were analyzed at the Si and O K ‐edges. The results show that luminescence from these materials is correlated with the excitation of O‐related energy states, and demonstrate that the composition and bonding structure of the silicon oxide host matrix play an active role in determining the luminescent properties of these materials, although the microstructure of the films may vary from film to film.