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Arbitrarily shaped Si nanostructures by glancing angle ion beam sputter deposition
Author(s) -
Patzig Christian,
Miessler André,
Karabacak Tansel,
Rauschenbach Bernd
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200945525
Subject(s) - materials science , scanning electron microscope , sputtering , substrate (aquarium) , deposition (geology) , nanostructure , sputter deposition , focused ion beam , thin film , electron beam induced deposition , ion beam , optics , ion beam assisted deposition , ion , optoelectronics , nanotechnology , beam (structure) , composite material , chemistry , scanning transmission electron microscopy , oceanography , biology , paleontology , physics , organic chemistry , sediment , geology
Using glancing angle deposition by ion beam sputtering, sculptured thin films (STFs) consisting of various Si nanostructures of manyfold shapes, such as inclined and vertical columns, screws, and spirals, were deposited on Si substrates. It will be shown that morphology, shape, and diameter of the structures are influenced and can thus be controlled by adjusting various deposition parameters, including substrate temperature and ratio of substrate rotational speed to film deposition rate. Especially the temperature‐controlled surface diffusion is found to play an important role in the growth of STFs.Cross‐sectional scanning electron microscopy micrograph of helical Si nanostructures, deposited with ion beam sputter glancing angle deposition.