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Quantum modeling of semiconductor gain materials and vertical‐external‐cavity surface‐emitting laser systems
Author(s) -
Bückers Christina,
Kühn Eckhard,
Schlichenmaier Christoph,
Imhof Sebastian,
Thränhardt Angela,
Hader Jörg,
Moloney Jerome V.,
Rubel Oleg,
Zhang Wei,
Ackemann Thorsten,
Koch Stephan W.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200945432
Subject(s) - semiconductor , optoelectronics , laser , materials science , semiconductor laser theory , quantum well , surface (topology) , vertical cavity surface emitting laser , semiconductor optical gain , optics , physics , geometry , mathematics
This article gives an overview of the microscopic theory used to quantitatively model a wide range of semiconductor laser gain materials. As a snapshot of the current state of research, applications to a variety of actual quantum‐well systems are presented. Detailed theory–experiment comparisons are shown and it is analyzed how the theory can be used to extract poorly known material parameters. The intrinsic laser loss processes due to radiative and nonradiative Auger recombination are evaluated microscopically. The results are used for realistic simulations of vertical‐external‐cavity surface‐emitting laser systems. To account for nonequilibrium effects, a simplified model is presented using pre‐computed microscopic scattering and dephasing rates. Prominent deviations from quasi‐equilibrium carrier distributions are obtained under strong in‐well pumping conditions.