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Investigation of antimony for arsenic exchange at the GaSb covered GaAs (001) surface
Author(s) -
Xiong Min,
Li Meicheng,
Qiu Yongxin,
Zhao Yu,
Wang Lu,
Zhao Liancheng
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200945415
Subject(s) - antimony , materials science , arsenic , layer (electronics) , diffraction , optoelectronics , crystallography , nanotechnology , chemistry , optics , metallurgy , physics
GaAs/GaAsSb surperlattices with different Sb soak time have been grown, which were followed by characterizations of high resolution X‐ray diffraction. We suggest that the Sb incorporation into the GaAs surface contributes to the GaSb formation on the surface. The Sb‐for‐As exchange at the GaSb covered GaAs (GaSb/GaAs) surface has been investigated using first principle calculations. The results reveal that the Sb substitution for subsurface As atoms with weak Ga–As bonding arrangements are energetically favored at the strained GaSb/GaAs surface. After the Sb‐for‐As exchange, the formed GaSb layer can be stabilized against degradation from As‐for‐Sb exchange in the growth of GaAs/GaAsSb surperlattices.
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