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Effect of pressure on the second‐order Raman scattering intensities of zincblende semiconductors
Author(s) -
TralleroGiner C.,
Syassen K.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200945336
Subject(s) - raman scattering , phonon , hydrostatic pressure , raman spectroscopy , semiconductor , x ray raman scattering , scattering , condensed matter physics , excitation , chemistry , materials science , molecular physics , atomic physics , optics , physics , optoelectronics , quantum mechanics , thermodynamics
A microscopic description of the two‐phonon scattering intensities in direct‐gap zincblende‐type semiconductors as a function of hydrostatic pressure and for non‐resonant excitation is presented. The calculations were performed according to the electron‐two‐phonon deformation potential interaction for the Γ 1 and Γ 15 components of the Raman tensor. It is shown that the effect of pressure on the Raman scattering cross‐section exhibits a complex behavior according to the contribution of the acoustical or optical phonons to the overtones and combinations. Second‐order scattering intensities via acoustical modes could decrease or increase with increasing hydrostatic pressure, while for combinations or overtones of optical phonons a decreasing intensity is obtained. Calculations of the effect of pressure on second‐order Raman intensities are compared to experimental results for ZnTe.