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Spin dependence scattering and spin‐flip effect on the current‐in‐plane transport behavior in NiO‐based‐spin valve
Author(s) -
Zhang A. M.,
Cai H. L.,
Wu X. S.
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200945309
Subject(s) - non blocking i/o , condensed matter physics , specular reflection , spin valve , spin flip , scattering , materials science , spin (aerodynamics) , annealing (glass) , spin polarization , spin hall effect , electron , optics , magnetoresistance , chemistry , physics , composite material , thermodynamics , magnetic field , biochemistry , quantum mechanics , catalysis
Camley and Barnas (CB) model was improved by taking into consideration of the interface scattering and bulk spin‐flip effect. The comparison between model's prediction and experimental data shows that the spin‐flip effect plays an indispensable role in affecting the MR of spin valves. The electron spin specular reflectivity at the interface of NiO/Co in NiO‐containing Co/Cu/Co spin valves is determined using the improved CB model, which varies with the structural configuration and the annealing temperature. Combination of the calculated data and the experimental results indicates that smooth interface of NiO/Co may mean large spin specular reflectivity.