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Electron localization and emission mechanism in wurtzite (Al, In, Ga)N alloys
Author(s) -
Liu Qihang,
Lu Jing,
Gao Zhengxiang,
Lai Lin,
Qin Rui,
Li Hong,
Zhou Jing,
Li Guangping
Publication year - 2010
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200945258
Subject(s) - wurtzite crystal structure , zigzag , electron , materials science , density functional theory , valence electron , valence band , condensed matter physics , valence (chemistry) , atomic physics , band gap , chemistry , optoelectronics , computational chemistry , physics , zinc , quantum mechanics , metallurgy , geometry , mathematics
The electronic structures of wurtzite InGaN and AlGaN alloys are investigated using the first‐principle density functional theory calculation. The results indicate that some short In–N–In atomic chains and small In–N atomic condensates composed of a few In and N atoms can be randomly formed in InGaN alloys. The electrons at the top of valence bands can be effectively localized in the vicinity of the In–N–In zigzag chains (weak localization) and the In–N atomic condensates (strong localization). These localized electrons extremely enhance the emission efficiency of InGaN alloys.