In rich In 1− x  Ga  x  N: Composition dependence of longitudinal optical phonon energy | Zendy

Tiras E. | Zendy; Gunes M. | Zendy; Balkan N. | Zendy; Schaff W. J. | Zendy

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In rich In 1− x Ga x N: Composition dependence of longitudinal optical phonon energy

Author(s) -

Tiras E.,

Gunes M.,

Balkan N.,

Schaff W. J.

Publication year - 2010

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200945144

Subject(s) - phonon , raman spectroscopy , spectroscopy , scattering , condensed matter physics , range (aeronautics) , materials science , raman scattering , doping , energy (signal processing) , analytical chemistry (journal) , physics , chemistry , optics , chromatography , quantum mechanics , composite material

The composition dependence of longitudinal optical (LO) phonon energies in undoped and Mg‐doped In 1− x Ga x N samples are determined using Raman spectroscopy in the range of Ga fraction from x = 0 to x = 56%. The LO phonon energy varies from 73 meV for InN to 83 meV for In 1− x Ga x N with 56% Ga. Independent measurements of temperature dependent mobility at high temperatures where LO phonon scattering dominates the transport were also used to obtain the LO phonon energy for x = 0 and x = 20%. The results obtained from the two independent techniques compare extremely well.

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