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Room‐temperature ferromagnetism of Cu‐doped ZnO films deposited by helicon magnetron sputtering
Author(s) -
Ran FanYong,
Imaoka Masao,
Tanemura Masaki,
Hayashi Yasuhiko,
Herng TunSeng,
Lau ShuPing
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200945091
Subject(s) - x ray photoelectron spectroscopy , ferromagnetism , materials science , photoluminescence , sputter deposition , helicon , doping , analytical chemistry (journal) , wurtzite crystal structure , sputtering , thin film , nuclear magnetic resonance , condensed matter physics , optoelectronics , chemistry , zinc , nanotechnology , metallurgy , plasma , physics , quantum mechanics , chromatography
Wurtzite structure ZnO films doped with 0.5 and 1.7 at% Cu were deposited by helicon magnetron sputtering. The prepared films exhibited room‐temperature (RT) ferromagnetism (FM). Maximum RT saturation magnetization of 2 emu/cm 3 (∼0.3 μ B /Cu) was observed for ZnO film with 1.7 at% Cu. Cu ions were in a bivalent state as identified by X‐ray photoelectron spectroscopy (XPS). In photoluminescence spectra, the green emission peak increased and redshifted due to the incorporation of Cu or defects induced by Cu incorporation. Since Cu and Cu‐related oxides are not RT ferromagnetic, and no trace of ferromagnetic contamination was detected in XPS results, the observed FM is considered to be an intrinsic property of Cu‐doped ZnO films. The FM was thought to originate from defect‐related mechanisms. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)