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Surface electronic properties of Mg‐doped InAlN alloys
Author(s) -
King P. D. C.,
Veal T. D.,
Schaff W. J.,
McConville C. F.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880766
Subject(s) - doping , materials science , alloy , condensed matter physics , fermi surface , fermi level , photoemission spectroscopy , x ray photoelectron spectroscopy , analytical chemistry (journal) , metallurgy , chemistry , optoelectronics , nuclear magnetic resonance , physics , superconductivity , quantum mechanics , electron , chromatography
High resolution X‐ray photoemission spectroscopy is utilised to determine the variation in surface Fermi level pinning position for Mg‐doped c ‐plane In x Al 1– x N alloys with x ≥ 0.4. For In‐rich alloys, a transition from inversion to hole depletion was inferred at an alloy composition of x ∼ 0.7. For Al‐rich alloys, insulating samples resulted due to the difficulty of p‐type doping AlN and Al‐rich alloys, resulting in approximately flat‐band conditions, with little surface space‐charge. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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