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Electrical injection of spin‐polarized electrons into single quantum dots
Author(s) -
Kümmell T.,
Arians R.,
Huang J.,
Wenisch J.,
Brunner K.,
Bacher G.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880659
Subject(s) - electroluminescence , quantum dot , spin (aerodynamics) , condensed matter physics , electron , physics , diode , optoelectronics , quantum dot laser , semiconductor , materials science , nanotechnology , quantum mechanics , semiconductor laser theory , layer (electronics) , thermodynamics
We demonstrate electrical spin‐injection into a single InAs quantum dot embedded in a GaAs‐based p–i–n diode structure using a diluted magnetic semiconductor (ZnMnSe) as a spin‐source. The spin‐information can be extracted directly by evaluating the polarisation degree of the single quantum dot electroluminescence signal. We obtain a spin‐polarisation up to 100% at T = 5 K that is decreasing with higher temperature. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)