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Growth and properties of defect‐free ZnSe nanowires and nanoneedles
Author(s) -
Aichele Thomas,
Tribu Adrien,
Bougerol Catherine,
Kheng Kuntheak,
Donatini Fabrice,
Dang Le Si,
André Régis,
Tatarenko Serge
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880652
Subject(s) - nanowire , wurtzite crystal structure , nanoneedle , materials science , molecular beam epitaxy , transmission electron microscopy , heterojunction , stacking fault , stacking , nanotechnology , scanning electron microscope , optoelectronics , crystallography , epitaxy , nanostructure , zinc , chemistry , layer (electronics) , dislocation , composite material , metallurgy , organic chemistry
ZnSe nanowires heterostructures were grown by molecular beam epitaxy in the vapour–liquid–solid growth mode assisted by gold catalysts. Size, shape and crystal structure are found to strongly depend on the growth conditions. Both, zinc‐blende and wurtzite crystal structures are observed using transmission electron microscopy. At low growth temperature nanoneedles are formed. For higher growth temperature, the nanowires have a high aspect ratio with sizes of 1–2 μm in length and 20–50 nm in width as observed by scanning electron microscopy. Growing a nanowire on top of the base of a nanoneedle allows us to obtain very narrow structures with a diameter less than 10 nm and a low density of stacking fault defects. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)