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Formation of stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self‐organized anisotropic strain engineering
Author(s) -
Sritirawisarn Nut,
van Otten Frank W. M.,
Eijkemans Tom J.,
Nötzel Richard
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880650
Subject(s) - quantum dot , stacking , superlattice , anisotropy , materials science , optoelectronics , wavelength , molecular beam epitaxy , strain (injury) , chemical beam epitaxy , template , epitaxy , self assembly , crystal (programming language) , condensed matter physics , nanotechnology , optics , chemistry , physics , layer (electronics) , medicine , organic chemistry , computer science , programming language
We have previously demonstrated the formation of linear InAs quantum dot (QD) arrays based on self‐organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP(100) by chemical beam epitaxy (CBE). The important step forward is the vertical stacking of the QD arrays with identical emission wavelength, realizing a three‐dimensionally self‐ordered QD crystal. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)