Formation of stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self‐organized anisotropic strain engineering | Zendy

Sritirawisarn Nut | Zendy; van Otten Frank W. M. | Zendy; Eijkemans Tom J. | Zendy; Nötzel Richard | Zendy

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Formation of stacked linear InAs quantum dot arrays on InGaAsP/InP(100) by self‐organized anisotropic strain engineering

Author(s) -

Sritirawisarn Nut,

van Otten Frank W. M.,

Eijkemans Tom J.,

Nötzel Richard

Publication year - 2009

Publication title -

physica status solidi (b)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.51

H-Index - 109

eISSN - 1521-3951

pISSN - 0370-1972

DOI - 10.1002/pssb.200880650

Subject(s) - quantum dot , stacking , superlattice , anisotropy , materials science , optoelectronics , wavelength , molecular beam epitaxy , strain (injury) , chemical beam epitaxy , template , epitaxy , self assembly , crystal (programming language) , condensed matter physics , nanotechnology , optics , chemistry , physics , layer (electronics) , medicine , organic chemistry , computer science , programming language

We have previously demonstrated the formation of linear InAs quantum dot (QD) arrays based on self‐organized anisotropic strain engineering of InAs/InGaAsP superlattice (SL) templates on InP(100) by chemical beam epitaxy (CBE). The important step forward is the vertical stacking of the QD arrays with identical emission wavelength, realizing a three‐dimensionally self‐ordered QD crystal. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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