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Non‐inverted electron–hole alignment in InAs/InP self‐assembled quantum dots
Author(s) -
Reimer M. E.,
Dalacu D.,
Lapointe J.,
Poole P. J.,
McKin W. R.,
Williams R. L.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880642
Subject(s) - quantum dot , dipole , electron , condensed matter physics , electric field , spins , quantum confined stark effect , physics , stark effect , quantum point contact , electro absorption modulator , photoluminescence , planar , quantum dot laser , optoelectronics , quantum well , quantum mechanics , laser , computer graphics (images) , computer science
Photoluminescence from individual InAs/InP quantum dots embedded within a planar n–i structure is studied as a function of vertical electric field. We demonstrate control of the electron number and determine the Stark shift and built‐in dipole at zero electric field. In contrast to the well studied InAs/GaAs quantum dot material system, we obtain a built‐in dipole which indicates that the electron lies above the hole at zero electric field. The magnitude and direction of the measured dipole suggests a uniform quantum dot composition. The gating principles we demonstrate can be applied to pre‐positioned InAs/InP quantum dots, such that arrays of initialized single spins can be employed for quantum information applications. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)