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Wavelength stabilized quantum dot lasers for high power applications
Author(s) -
Pavelescu E. M.,
Reithmaier J. P.,
Kaiser W.,
Weinmann P.,
Kamp M.,
Forchel A.
Publication year - 2009
Publication title -
physica status solidi (b)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.51
H-Index - 109
eISSN - 1521-3951
pISSN - 0370-1972
DOI - 10.1002/pssb.200880635
Subject(s) - laser , wavelength , optoelectronics , materials science , quantum dot laser , optics , brightness , quantum dot , quantum well , physics
GaInAs/GaAs quantum dot lasers were developed with emission wavelengths of about 920 nm for high power high brightness applications. The laser structure and active dot layer was engineered in a way which allow a record‐low value of the temperature dependence of the emission wavelength with a temperature coefficient of 0.08 nm/K, i.e., about 4 times lower than quantum well lasers. Tapered lasers were fabricated with single lobe output in cw of more than 3 W. By additional distributed Bragg gratings, single mode output powers with >45 dB sidemode suppression and more than 1 W in cw could be obtained, which allow a stable single mode operation between 15–80 °C. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)